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Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Giraud, Paul, Hou, Bo, Pak, Sangyeon, Sohn, Jung Inn, Morris, Stephen, Cha, SeungNam and Kim, Jong Min 2018. Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires. Nanotechnology 29 (7) , 075202. 10.1088/1361-6528/aaa2e6

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We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W−1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: IOP Publishing: Hybrid Open Access
ISSN: 0957-4484
Date of First Compliant Deposit: 25 February 2020
Date of Acceptance: 19 December 2017
Last Modified: 25 Feb 2020 12:35

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