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Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO2 structure

Poghossian, A., Abouzar, M. H., Razavi, A., Bäcker, M., Bijnens, N., Williams, Oliver Aneurin, Haenen, K., Moritz, W., Wagner, P. and Schöning, M. J. 2009. Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO2 structure. Electrochimica Acta 54 (25) , pp. 5981-5985. 10.1016/j.electacta.2009.03.011

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A capacitive field-effect EDIS (electrolyte–diamond–insulator–semiconductor) sensor with improved pH and penicillin sensitivity has been realised using a nanocrystalline-diamond (NCD) film as sensitive gate material. The NCD growth process on SiO2 as well as an additional surface treatment in oxidising medium have been optimised to provide high pH-sensitive, non-porous O-terminated films without damage of the underlying SiO2 layer. The surface morphology of O-terminated NCD thin films and the layer structure of EDIS sensors have been studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) methods. To establish the relative coverage of the surface functional groups generated by the oxidation of NCD surfaces, X-ray photoelectron spectroscopy analysis was carried out. The hydrophilicity of NCD thin films has been studied by water contact-angle measurements. A nearly Nernstian pH sensitivity of 54–57 mV/pH has been observed for O-terminated NCD films treated in an oxidising boiling mixture for 80 min and in oxygen plasma. The high pH-sensitive properties of O-terminated NCD have been used to develop an EDIS-based penicillin biosensor. A freshly prepared penicillin biosensor possesses a high sensitivity of 85 mV/decade in the concentration range of 0.1–2.5 mM penicillin G. The lower detection limit is 5 μM.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Nanocrystalline diamond; Field-effect; pH sensor; Penicillin biosensor
Publisher: Elsevier
ISSN: 0013-4686
Last Modified: 04 Jun 2017 03:12

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