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A new diamond based heterostructure diode

Kohn, E., Denisenko, A., Kubovic, M., Zimmermann, T., Williams, Oliver Aneurin and Gruen, D. M. 2006. A new diamond based heterostructure diode. Semiconductor Science and Technology 21 (4) , L32-L35. 10.1088/0268-1242/21/4/L02

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A diamond based heterostructure diode containing a p-type doped diamond active layer and an n-type doped ultra-nano-crystalline top layer has been investigated. Analysis suggests that the configuration is that of a merged diode, containing two areas of different interfacial barrier potentials in parallel related to the ultra-nano-crystalline grains and the grain boundaries, respectively. Thus this heterostructure may be ideally suited to combine low forward losses with high blocking voltages in diamond high power rectifiers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Institute of Physics
ISSN: 0268-1242
Last Modified: 04 Jun 2017 04:11

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