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Weak localization in ultrananocrystalline diamond

Mareš, J. J., Hubík, P., Krištofik, J., Kindl, D., Fanta, M., Nesládek, M., Williams, Oliver Aneurin and Gruen, D. M. 2006. Weak localization in ultrananocrystalline diamond. Applied Physics Letters 88 (9) , 092107. 10.1063/1.2176853

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In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity ( ∼ 4200 S m−1) revealed surprisingly at Kelvin temperatures a giant negative magnetoresistance reaching up to 22% at 1.28 K and at 8 T. The analysis of experimental data has borne evidence of the fact that the transport in this subsystem has a character of low-dimensional disordered metal and it is controlled by quantum interference effects of electrons resulting in their weak localization.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Additional Information: Pdf uploaded in accordance with publisher's policy at (accessed 20/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:16

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