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Excited-state gain dynamics in InGaAs quantum-dot amplifiers

Schneider, S., Borri, Paola, Langbein, Wolfgang Werner, Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2005. Excited-state gain dynamics in InGaAs quantum-dot amplifiers. IEEE Photonics Technology Letters 17 (10) , pp. 2014-2016. 10.1109/LPT.2005.856446

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The ultrafast gain recovery dynamics of the first excited state (ES) is studied in an electrically pumped InGaAs quantum-dot amplifier at room temperature and compared with the ground-state (GS) gain dynamics. Pump-probe differential transmission experiments are performed in heterodyne detection and the gain dynamics are investigated as a function of injection current. An ultrafast (<200 fs) initial gain recovery of both GS and ES transition is found, promising for optical signal processing at high bit rates. The obtained results suggest the occurrence of a fast recovery of the state occupation mediated by carrier-carrier scattering as long as a reservoir of carriers in the ESs and wetting layer is present.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Amplifiers; quantum dots (QDs); semiconductor devices; semiconductor lasers; spectroscopy
Publisher: IEEE
ISSN: 1041-1135
Last Modified: 13 May 2019 20:38

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