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Dephasing of biexcitons in InGaAs quantum dots

Borri, Paola, Langbein, Wolfgang Werner, Schneider, S., Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2003. Dephasing of biexcitons in InGaAs quantum dots. physica status solidi (b) 238 (3) , pp. 593-600. 10.1002/pssb.200303177

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We present measurements of the dephasing time of biexcitonic transitions in self-organized InGaAs quantum dots in the temperature range from 10 K to 70 K. We use an heterodyne four-wave mixing technique that allows direct measurement of the dephasing time in an inhomogeneously broadened quantum-dot ensemble. By applying an electrical injection, we progressively increase the number of carriers in the quantum dots and investigate the passage from a four-wave mixing response dominated by the one-exciton transition to a response dominated by biexcitonic and multiexcitonic transitions. The temperature dependence of the homogeneous broadening of the biexciton-to-exciton transition is extrapolated to zero injection current and its physical origin in terms of radiative recombination and phonon interactions is discussed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley-Blackwell
ISSN: 0370-1972
Last Modified: 13 May 2019 20:39

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