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Ultrafast gain dynamics in 1.3um InAs/GaAs quantum-dot optical amplifiers: The effect of p doping

Cesari, Valentina, Langbein, Wolfgang Werner, Borri, Paola, Rossetti, Marco, Fiore, Andrea, Mikhrin, S., Krestnikov, I. and Kovsh, A. 2007. Ultrafast gain dynamics in 1.3um InAs/GaAs quantum-dot optical amplifiers: The effect of p doping. Applied Physics Letters 90 (20) , 201103. 10.1063/1.2739079

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Ultrafast gain dynamics of the ground-state transition are measured in electrically pumped InAs/GaAs quantum-dot amplifiers emitting near 1.3 μm at room temperature. Gain recovery on a subpicosecond time scale occurs at high electrical injection. However, when comparing p-doped and undoped devices fabricated under identical conditions and operating at the same gain, faster absorption recovery but slower gain dynamics are observed in p-doped amplifiers. The slower gain dynamics is attributed to a reduced reservoir of excited-state electrons in p-doped quantum-dot devices, which limits the recovery of the electron ground-state occupation mediated by intradot carrier-carrier scattering.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: semiconductor optical amplifiers, quantum dot lasers, high-speed optical techniques, semiconductor doping, ground states, indium compounds, gallium arsenide, III-V semiconductors, laser transitions
Additional Information: Pdf uploaded in accordance with publisher's policy at (accessed 20/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 13 May 2019 20:41

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