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Well-width dependence of exciton-phonon scattering in InxGa1-xAs/GaAs single quantum wells

Borri, Paola, Langbein, Wolfgang Werner, Hvam, J. and Martelli, F. 1999. Well-width dependence of exciton-phonon scattering in InxGa1-xAs/GaAs single quantum wells. Physical Review B 59 (3) , pp. 2215-2222. 10.1103/PhysRevB.59.2215

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The temperature and density dependencies of the exciton dephasing time in In0.18Ga0.82As/GaAs single quantum wells with different thicknesses have been measured by degenerate four-wave mixing. The exciton-phonon scattering contribution to the dephasing is isolated by extrapolating the dephasing rate to zero-exciton density. From the temperature dependence of this rate we have deduced the linewidth broadening coefficients for acoustic and optical phonons. We find acoustic-phonon coefficients that increase from 1.6 to 3 μeV/K when increasing the well width from 1 to 4 nm. This is in quantitative agreement with theoretical predictions when the spatial extension of the exciton wave function, strongly penetrating into the GaAs barrier in thin InxGa1-xAs quantum wells, is taken into account. The optical-phonon coefficient does not show a systematic dependence on well thickness, and is comparable with the value for bulk GaAs.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 15 Jul 2020 14:23

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