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Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

Fiore, A., Oesterle, U., Stanley, R. P., Houdre, R., Lelarge, F., Ilegems, M., Borri, Paola, Langbein, Wolfgang Werner, Birkedal, D., Hvam, J. M., Cantoni, M. and Bobard, F. 2001. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide. IEEE Journal of Quantum Electronics 37 (8) , pp. 1050-1058. 10.1109/3.937394

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We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 μm. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 μm is obtained by embedding the dots in an InGaAs layer. Depending on the growth structure, dot densities of 1-6×1010 cm-2 are obtained. High dot densities are associated with large inhomogeneous broadenings, while narrow photoluminescence (PL) linewidths are obtained in low-density samples. From time-resolved PL experiments, a long carrier lifetime of ≈1.8 ns is measured at room temperature, which confirms the excellent structural quality. A fast PL rise (τrise=10±2 ps) is observed at all temperatures, indicating the potential for high-speed modulation. High-efficiency light-emitting diodes (LEDs) based on these dots are demonstrated, with external quantum efficiency of 1% at room temperature. This corresponds to an estimated 13% radiative efficiency. Electroluminescence spectra under high injection allow us to determine the transition energies of excited states in the dots and bidimensional states in the adjacent InGaAs quantum well.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Epitaxial growth; light-emitting diodes; quantum dots; semiconductor lasers
Publisher: IEEE
ISSN: 0018-9197
Last Modified: 15 Jul 2020 14:23

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