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Ultranarrow polaritons in a semiconductor microcavity

Jensen, J. R., Borri, Paola, Langbein, Wolfgang Werner and Hvam, J. M. 2000. Ultranarrow polaritons in a semiconductor microcavity. Applied Physics Letters 76 (22) , pp. 3262-3264. 10.1063/1.126601

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We have achieved a record high ratio (19) of the Rabi splitting (3.6 meV) to the polaritonlinewidth (190 μeV), in a semiconductor λ microcavity with a single 25 nm GaAsquantum well at the antinode. The narrow polariton lines are obtained with a special cavity design which reduces the exciton broadening due to scattering with free charges and has a very low spatial gradient of the cavity resonance energy. Since the static quantum-well disorder is very small, the polariton broadening is dominantly homogeneous. Still, the measured linewidths close to zero detuning cannot be correctly predicted using the linewidth averaging model.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 16 May 2019 23:08

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