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Dephasing in InAs/GaAs quantum dots

Borri, Paola, Langbein, Wolfgang Werner, Mørk, J., Hvam, J. M., Heinrichsdorff, F., Mao, M. -H. and Bimberg, D. 1999. Dephasing in InAs/GaAs quantum dots. Physical Review B 60 (11) , 7784 -7787. 10.1103/PhysRevB.60.7784

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The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290±80 fs from spectal-hole burning and of 260±20 fs from four-wave mixing.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 15 Apr 2020 13:14

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