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Ultrafast spectroscopy of semiconductor devices

Borri, Paola, Langbein, Wolfgang Werner and Hvam, J. M. 1998. Ultrafast spectroscopy of semiconductor devices. Presented at: 10th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, Lithuania, August-September 1998. Published in: Asmontas, S. and Dargys, A. eds. Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September 1998. Materials Science Forum , vol. 297-8. Zurich: Trans TechPublications, pp. 67-71.

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In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in information processing at high data transfer rates. The technique is based on single pulse propagation through the device, with pulse duration tunable from 150fs to 11ps, and the characterization of the pulse at the output of the device by measuring the total pulse energy, the real time profile and the frequency spectrum. Results on a InGaAsP bulk amplifier are shown as an example.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: ultrafast spectroscopy; semiconductor amplifiers
Publisher: Trans TechPublications
ISBN: 9780878498246
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Last Modified: 16 May 2019 23:19

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