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Biexciton binding energy in ZnSe quantum wells and quantum wires

Wagner, H. P., Tranitz, H.-P., Langbein, Wolfgang Werner, Hvam, J. M., Bacher, G. and Forchel, A. 2002. Biexciton binding energy in ZnSe quantum wells and quantum wires. physica status solidi (b) 231 (1) , pp. 11-18. 10.1002/1521-3951(200205)231:1<11::AID-PSSB11>3.0.CO;2-V

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The biexciton binding energy EXX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating for well widths less than 8 nm. In the quantum wires an increase of 30% is found in the smallest quantum wire structures compared to the corresponding quantum well value. A simple analytical model taking into account the quantum confinement in these low-dimensional systems is used to explain the experimentally observed dependence of the biexciton binding energies.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley
ISSN: 15213951
Date of Acceptance: 16 November 2001
Last Modified: 04 Jun 2017 08:00

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