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Enhanced confinement energy in strained asymmetric T-shaped quantum wires

Jensen, J. R., Hvam, J. M. and Langbein, Wolfgang Werner 2001. Enhanced confinement energy in strained asymmetric T-shaped quantum wires. Journal of Crystal Growth 227-22 , pp. 966-969. 10.1016/S0022-0248(01)00960-5

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A new type of T-shaped quantum wire, based on a strained asymmetric structure, has been grown and characterised. A narrow GaAs well is overgrown on an multi quantum well structure consisting of wide InAlGaAs wells with Al0.3Ga0.7As barriers. Since the lattice constants of the InAlGaAs wells and bulk GaAs are different, the overgrown well is strained at the T-shaped intersection. The influence of the strain on the confinement energy is investigated by comparison with similar unstrained asymmetric structures and calculated values. A strain-induced enhancement of the confinement energy of 5–10 meV is found for In molefractions of 10% and 15% in the multi quantum wells. For an In mole fraction of 20% no quantum wire states are observed, probably due to dislocation formation in the overgrown layers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0022-0248
Last Modified: 04 Jun 2017 08:00

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