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Huge binding energy of localized biexcitons in CdS/ZnS quantum structures

Woggon, U., Hild, K., Gindele, F., Langbein, Wolfgang Werner, Hetterich, M., Grün, M. and Klingshirn, C. 2000. Huge binding energy of localized biexcitons in CdS/ZnS quantum structures. Physical Review B 61 (19) , pp. 12632-12635. 10.1103/PhysRevB.61.12632

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Biexcitons localized in ultrathin CdS/ZnS single quantum wells with fluctuating well thicknesses are investigated by two-photon absorption and single-exciton spectroscopy. For the binding energy of the confined biexciton, a value of ΔEB=38 meV is determined. Comparing ΔEB with the CdS bulk exciton binding energy ERyd=28 meV, the largest known ratio ΔEB/ERyd=1.4 is found. Additionally, a strong enhancement of exchange splitting effects is observed resulting in a linearly polarized exciton doublet and a single, linearly polarized biexciton line.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 04 Jun 2017 08:00

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