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Linewidth statistics of single InGaAs quantum dot photoluminescence lines

Leosson, K., Jensen, J. R., Hvam, J. M. and Langbein, Wolfgang Werner 2000. Linewidth statistics of single InGaAs quantum dot photoluminescence lines. physica status solidi (b) 221 (1) , pp. 49-53. 10.1002/1521-3951(200009)221:1<49::AID-PSSB49>3.0.CO;2-F

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We have used photoluminescence spectroscopy with high spatial and spectral resolution to measure the linewidths of single emission lines from In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10 K, we find a broad, asymmetric distribution of linewidths with a maximum at 50 μeV. The distribution of linewidths is not significantly influenced by small variations in the quantum dot confinement potential. We claim that the wider transition lines are broadened by local electric field fluctuations while narrower lines are homogeneously broadened by acoustic-phonon interactions. The width of narrow single-dot luminescence lines depends only weakly on temperature up to 50 K, showing a broadening of 0.4 μeV/K. Above 50 K, a thermally activated behavior of the linewidth is observed. This temperature dependence is consistent with the discrete energy level structure of the dots.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley
ISSN: 1521-3951
Last Modified: 04 Jun 2017 08:00

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