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Transient four-wave mixing in T-shaped GaAs quantum wires

Langbein, Wolfgang Werner, Gislason, H. and Hvam, J. 1999. Transient four-wave mixing in T-shaped GaAs quantum wires. Physical Review B 60 (24) , pp. 16667-16674. 10.1103/PhysRevB.60.16667

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The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement. In this wire of 6.6×24 nm2 size, we find a one-dimensional confinement of more than 20 meV, an inhomogeneous broadening of 3.4 meV, an exciton binding energy of 12 meV, and a biexciton binding energy of 2.0 meV. A dispersion of the homogeneous linewidth within the inhomogeneous broadening due to phonon-assisted relaxation is observed. The exciton acoustic-phonon-scattering coefficient of 6.1±0.5 μeV/K is larger than in comparable quantum-well structures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 04 Jun 2017 08:01

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