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Number of items: 33.

Ahmed, Jamal, Xie, Shiyu, Liang, Baolai, Yi, Xin, Jin, Xiao, Kesaria, Manoj, David, John. P. R. and Huffaker, Diana L. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57 (2) , 4500206. 10.1109/JQE.2021.3058356

Kwan, Dominic, Kesaria, Manoj, Anyebe, Ezekiel and Huffaker, Diana 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 10.1016/j.infrared.2021.103756

Anyebe, Ezekiel Anyebe and Kesaria, Manoj 2020. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 10.1002/nano.202000142

Anyebe, Ezekiel A., Kesaria, Manoj, Sanchez, A. M. and Zhuang, Qiandong 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126 (6) , 427. 10.1007/s00339-020-03609-z
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Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. and Patanè, A. 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116 (14) , 142108. 10.1063/5.0002407

Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9 , 17665. 10.1038/s41598-019-54047-8

Sharpe, M. K., Marko, I. P., Duffy, D. A., England, J., Schneider, E., Kesaria, M., Fedorov, V., Clarke, E., Tan, C. H. and Sweeney, S. J. 2019. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics 126 (12) , 125706. 10.1063/1.5109653

Kumar, Praveen, Tuteja, Mohit, Kesaria, Manoj, Waghmare, U. V. and Shivaprasad, S. M. 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101 (13) , p. 131605. 10.1063/1.4751986

Keen, J.A., Repiso, E, Lu, Qi, Kesaria, Manoj, Marshall, A.R.J and Krier, A 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93 , pp. 375-380. 10.1016/j.infrared.2018.08.001

Paola, D.M.D, Velichko, A, Bomers, Mario, Balakrishnan, Nilanthy, Makarovsky, Oleg, Capizzi, Mario, Cerutti, Laurent, Baranov, A.N., Kesaria, Manoj, Krier, A, Taliercio, Thierry and Patane, A 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6 , pp. 1700492-1700499. 10.1002/adom.201700492

Keen, J. A., Lane, D, Kesaria, Manoj, Marshall, A. R. J and Krier, A. 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51 (7) , 075103-075112. 10.1088/1361-6463/aaa60e/meta

Velichko, A.V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A, Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. and Patane, A. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109 (18) , 182115. 10.1063/1.4967381

Kesaria, M., de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49 (43) , 435107. 10.1088/0022-3727/49/43/435107

Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A., Evaes, L., Mori, N., Krier, A. and Patane, A. 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6 , 32039. 10.1038/srep32039

Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D. and Bensaoula, A. 2016. Effect of N-2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy. Journal of Applied Physics 119 (10) , 104302. 10.1063/1.4943179

Krier, A., Yin, M., Marshall, A. R. J., Kesaria, M., Krier, S. E., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. and Scholes, A. 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73 , pp. 126-129. 10.1016/j.infrared.2015.09.011

Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q. D., Krier, A., Patane, A., Polimeni, A. and Capizzi, M. 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30 (10) , 105030. 10.1088/0268-1242/30/10/105030

Wheatley, R., Kesaria, M., Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D. and Krier, A. 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106 (23) , 232105. 10.1063/1.4922590

Bhasker, H. P., Thakur, Varun, Kesaria, Manoj, Shivaprasad, S. M. and Dhar, S. 2015. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy. AIP Conference Proceedings 1583 , pp. 252-258. 10.1063/1.4865647

Kesaria, M., Birindelli, S., Velichko, A. V., Zhuang, Q. D., Patane, A., Capizzi, M. and Krier, A. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68 , pp. 138-142. 10.1016/j.infrared.2014.11.016

Anyebe, E. A., Zhuang, Q., Kesaria, M. and Krier, A. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29 (8) , 085010. 10.1088/0268-1242/29/8/085010

Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. and Krier, A. 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology 29 (7) , 075011. 10.1088/0268-1242/29/7/075011

Negi, D.S., Loukya, B., Dileep, K., Kesaria, Manoj, Kumar, N. and Datta, R. 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63 , p. 289. 10.1016/j.spmi.2013.09.007

Thakur, Varun, Kesaria, Manoj and Shivaprasad, S.M. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171 , p. 8. 10.1016/j.ssc.2013.07.012

Shetty, Satish, Kesaria, Manoj, Ghatak, Jay and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13 (6) , p. 2407. 10.1021/cg4000928

Bhasker, H. P., Dhar, S., Sain, A., Kesaria, Manoj and Shivaprasad, S. M. 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101 (13) , p. 132109. 10.1063/1.4755775

Kumar, Praveen, Tangi, Malleswararao, Shetty, Satish, Kesaria, Manoj and Shivaprasad, S. M. 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411 10.1557/opl.2012.760

Mittra, Joy, Abraham, Geogy Jiju, Kesaria, Manoj, Bahl, Sumit, Gupta, Aman, Shivaprasad, Sonnada M., Viswanadham, Chebolu Subrahmanya, Kulkarni, Ulhas Digambar and Dey, Gautam Kumar 2012. Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film. Materials Science Forum 710 , pp. 757-761. 10.4028/

Kesaria, Manoj, Shetty, Satish and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11 (11) , pp. 4900-4903. 10.1021/cg200749w

Kesaria, Manoj, Shetty, Satish, Cohen, P.I. and Shivaprasad, S.M. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46 (11) , p. 1811. 10.1016/j.materresbull.2011.07.043

Kesaria, Manoj and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99 (14) , p. 143105. 10.1063/1.3646391

Kesaria, Manoj, Shetty, Satish and Shivaprasad, S.M. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326 (1) , pp. 191-194. 10.1016/j.jcrysgro.2011.01.095

Kesaria, Manoj, Kumar, Mahesh, Govind, and Shivaprasad, S.M. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256 (2) , p. 576. 10.1016/j.apsusc.2009.08.064

This list was generated on Wed May 5 04:13:59 2021 BST.